2N7002KT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
2N7002KT1G
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 300 mW 60 V Continuous Drain Current (ID):320 mA 700 pC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.6 Ω |
| Height | 1.01 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 420 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 2.3 V |
| Number of Channels | 1 |
| Input capacitance | 24.5 pF |
| Continuous Drain Current (ID) | 320 mA |
| Rds On Max | 1.6 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 12.2 ns |
| Turn-Off Delay Time | 55.8 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Gate Charge | 700 pC |
| Drain to Source Resistance | 1.19 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 15920
Distributors
pcbx
pcbxUnit Price$0.06508
Ext.Price$0.06508
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.06508 | $0.06508 |
| 10 | $0.03254 | $0.32540 |
| 50 | $0.02949 | $1.47450 |
| 100 | $0.02673 | $2.67300 |
| 500 | $0.02422 | $12.11000 |
| 1000 | $0.02195 | $21.95000 |
| 3000 | $0.01989 | $59.67000 |
| 5000 | $0.01826 | $91.30000 |
| 10000 | $0.01676 | $167.60000 |